A novel simulation strategy for ultrafast InP/InGaAsP optoelectronic modulator analysis

摘要

In this paper we present a simulation strategy for the accurate prediction of the functionality of an InP based optoelectronic modulator. The device is composed by an InP-InGaAsP p-i-n diode embedded in a rib waveguide and a Mach-Zehnder interferometer. Finite Element Analysis for both semiconductor and optical equations solution is exploited. We present numerical results indicating that with a 2 mm-long device a reverse bias of 11V is needed for a 180° phase shift.