RECENT RESULTS ON ADVANCED MOLECULAR WAFER BONDING TECHNOLOGY FOR 3D INTEGRATION ON SILICON

摘要

In this paper we review the potentiality of advanced molecular wafer bonding technology for 3D integration on Silicon. The so-called bonding and thinning down method is adapted to specific device requirements. Developments such as wafer to wafer bonding for double gate CMOS processing, capacitive coupling created by molecular bonding between CMOS and chip to CMOS bonding for optic coupling will be described. Topics like planarisation, oxide thickness monitoring, substrate removal, and wafer to wafer alignment will be discussed.