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SRAF Placement and Sizing Using Inverse Lithography Technology

机译:使用反光刻技术的SRAF放置和大小调整

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摘要

The use of sub-resolution assist features (SRAFs) is a necessary and effective technique to mitigate the proximity effects resulting from low-k1 imaging with aggressive illumination schemes. This paper investigates the application of one implementation of Inverse Lithography Technology (ILT) to determine optimized SRAF placement and size. In contrast to traditional rule-based methods in which SRAF placement and size are typically predetermined and frozen in place, unmodified during OPC, ILT allows for the simultaneous placement and sizing of SRAFs during target inversion to maximize image quality while also maintaining margin against sidelobe printing. Furthermore, ILT enables SRAF placement for random as well as periodic patterns. In this paper, SRAF placement using this approach is studied through simulations. The computed mask and simulation results are shown to illustrate effectiveness of ILT-generated SRAF features.
机译:使用子分辨率辅助功能(SRAF)是一种必要且有效的技术,可以缓解采用主动照明方案的低k1成像所产生的邻近效应。本文研究了反光刻技术(ILT)的一种实现方法在确定最佳SRAF位置和尺寸方面的应用。与传统的基于规则的方法不同,传统的基于规则的方法通常预先确定SRAF的位置和大小并冻结在适当的位置,在OPC期间不进行修改,ILT允许在目标反转期间同时放置SRAF和调整大小,以最大程度地提高图像质量,同时还保留了避免旁瓣打印的余量。此外,ILT支持对随机和周期性模式进行SRAF放置。在本文中,通过模拟研究了使用这种方法的SRAF放置。显示了计算出的蒙版和仿真结果,以说明ILT生成的SRAF功能的有效性。

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