Negative Capacitance in Short-Channel Tunnel Field-Effect Transistors

摘要

Based on band-to-band tunneling, tunnel field-effect transistors (TFETs) have demonstrated its small subthreshold swing for energy-efficient applications. This work explores the use of negative capacitance in extremely scaled short-channel TFETs. Against conventional MOSFETs and P-i-N TFETs, the scaled asymmetric junctionless TFETs preserve the short-channel benefits of using negative capacitance ferroelectric to ensure boosted on-current with minimized swing.