Electrical Characteristic Fluctuation and Suppression in Emerging CMOS Device and Circuit

摘要

We study the characteristic variability in high-K metal-gate CMOS device and circuit induced by various intrinsic fluctuation sources, Using an experimentally calibrated 3D device-and-circuit coupled simulation; We estimate the effect of metal-gate work-function fluctuation, oxide-thickness fluctuation, process-variation effect, and random-dopant fluctuation on device DC/AC characteristics. We then predict their impacts on transfer and dynamic properties of digital and analog circuits. Finally, variability suppression techniques are demonstrated from device engineering viewpoints.