ELECTRICAL CHARACTERISTICS TESTING METHOD FOR CMOS DIGITAL INTEGRATED CIRCUIT

摘要

PURPOSE: To obtain an electrical characteristics testing method for CMOS digital integrated circuit by which defective MOS transistor in a CMOS digital integrated circuit can be detected easily in a short time. ;CONSTITUTION: Electrode terminal 4 of P-channel MOS transistor substrate is isolated from a power supply terminal 5, i.e., the source electrode terminals of P-channel MOS transistors 8, 9. Furthermore, electrode terminal 6 of an N-channel MOS transistor substrate is isolated from a ground terminal, i.e., the source electrode terminal of an N-channel MOS transistor 11. All terminals other than the electrode terminal 4 of the P-channel MOS transistor substrate, are set at an identical potential having a difference from the potential at the electrode terminal 4 of the P-channel MOS transistor thus detecting a defective MOS transistor based on measurements of leak current.;COPYRIGHT: (C)1993,JPO&Japio