Dielectric Confinement and Fluctuations of the Local Density of State in the Source and Drain of an Ultra Scaled SOI NMOS Transistor

摘要

We fabricated SOI nanowire MOSFETs with a very small channel volume and few dopants between the highly doped source and drain. The ionization energy of these isolated As dopants can be extracted. We found a much higher energy than calculated value for As in bulk Si. This enhancement is due to the so-called dielectric confinement, because of the proximity of the buried oxide. Transport through this single dopant also enables probing the fluctuations of local density of states in the contacts.