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Synthesis and Characterization of Nanocrystalline Cdi__xZn_xS Thin Films by Chemical Bath Deposition (CBD) Method

机译:化学浴沉积(CBD)法的纳米晶CDI__XZN_XS薄膜的合成与表征

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Cadmium zinc sulphide (Cd_(1-x)Zn_xS), a typical ternary II-VI semiconductor material, has considerable interest owing to their use in the fabrication of heterojunction solar cells and other optoelectronic devices. This work presents the influence of different solvent ratios of Cd and Zn on optical, structural and morphological properties of the prepared Cd_(1- x)Zn_xS thin films by a simple cost effective chemical Bath Deposition (CBD) technique on glass substrate. Nanocrystalline thin films of Cd_(1-x)Zn_xS were prepared in an alkaline medium with the molarity of 0.25M at 343K for 90 minutes with varying Cd and Zn solvent ratios. The as deposited films were characterized by UV- Visible spectra, XRD and SEM. The direct optical band gap energies of the as deposited films for different solvent ratios were found in the range of 3.2-4.1 eV. An increase in transmittance and band gap value was found with the increasing Zn concentration into CdS thin films. The XRD studies showed the both hexagonal and cubic phase structure of Cd_(1-x)Zn_xS thin films and the estimated grain size was 6.63nm. SEM micrographs reveal nearly uniform and homogeneous Cd_(1-x)Zn_xS films without any pin holes.
机译:镉硫化锌(CD_(1-X)Zn_xS),一个典型的三元II-VI族半导体材料,具有由于其在异质结太阳能电池和其他光电器件的制造中使用相当大的兴趣。该工作呈现了CD和Zn的不同溶剂比对制备的CD_(1- X)Zn_XS薄膜的光学,结构和形态学性能的影响,通过在玻璃基板上的简单成本有效的化学浴沉积(CBD)技术。 CD_(1-X)Zn_XS的纳米晶薄膜在碱性介质中制备,其摩尔在343K处为0.25m,50分钟,具有不同的Cd和Zn溶剂比。沉积薄膜的特征在于UV可见光谱,XRD和SEM。在3.2-4.1eV的范围内,发现了作为不同溶剂比的作为沉积薄膜的直接光带隙能量。发现透射率和带间隙值的增加,随着Zn浓度的增加,进入CDS薄膜。 XRD研究表明CD_(1-X)Zn_XS薄膜的六边形和立方相结构均为6.63nm。 SEM显微照片揭示了几乎均匀和均匀的CD_(1-X)Zn_XS薄膜,而没有任何销孔。

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