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Rescalable Solid-State Nanopores

机译:可扫描固态纳米孔

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Nanopores in 10-30 nm thickness Si_4N_3 membranes were milled using Ga~+ ions. Dose dependence of the hole diameter and shape was established and explained as resulting from the intensity distribution of the focused ion beam. The initial diameter of the milled pore is dependent on the full-width half-maximum of the axial portion of the beam, whereas shape variations with dose are related to characteristics of the beam periphery. Membrane milling can thereby yield information on the FIB system itself, since obfuscating re-deposition is effectively eliminated. Gradual closure of the nanopore can be realized through raster scan exposure to an electron beam. This simple method provides shape control of the milled nano-pores as well as of more complex patterns milled in membranes.
机译:使用Ga〜+离子研磨10-30 nm厚度Si_4N_3膜中的纳米孔。 根据聚焦离子束的强度分布,建立和解释了孔直径和形状的剂量依赖性。 铣削孔的初始直径取决于光束的轴向部分的全宽半最大值,而用剂量的形状变化与梁周边的特性有关。 因此,膜研磨可以产生关于FIB系统本身的信息,因为有效地消除了再凝固再沉积。 通过光栅扫描暴露于电子束,可以实现纳米孔的逐渐闭合。 这种简单的方法提供了研磨纳米孔的形状控制以及在膜中研磨的更复杂的图案。

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