The residual-type bridge defects were fabricated by etching full-height defects using EB etching tool. The residual-type defects were printed on wafer. The 2.9 and 8.2-nm-high TaBN layer cause 30 and 40 percent of reflectance reduction respectively. No printable ML damage was observed around EB etching process area. At outer focus range, the 2.9-nm-high bridge defects cause more than 10 percent of CD error.
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