Direct growth of graphene on sputter-deposited Al2O3 thin layer on SiO2/Si substrate by thermal chemical vapor deposition method

摘要

Graphene is a single atomic layer of carbon atoms that form a honeycomb structure, and thus, it is the ultimate thin layer. Thanks to its high carrier mobility, graphene is one of the materials with most promise to open a new era of electrical and optical integrated circuits. A method needs to be developed to grow graphene directly on sub-nm-order flat insulating layers in order to fabricate electrical and optical devices that utilize graphene. In addition, using a Si wafer as a substrate is strongly desirable. The current big Si-electronics industry has accumulated enormous amounts of knowledge and know-how concerning Si. Thus, starting graphene-electronics on a Si substrate seems practical.