Epitaxial Growth of Al2O3 on Sapphire and Ruby Substrates by Chemical Vapor Deposition

摘要

The growth of Al2O3 on single crystal sapphire and ruby substrates via the net chemical reaction 2 AlCl3(g) + 3 H2O(g) = Al2O3(s) + 6 HCl(g), was investigated in the temperature range from 1400 to 1600C. Deposits that were obtained varied from polycrystalline at lower temperatures to single crystal at the higher ones. Use of a 60 deg. oriented substrate resulted in a better quality, faster growing deposit than did use of 0 deg. and 90 deg. oriented substrates. (Authors)