首页> 外国专利> SUSCEPTOR FOR CHEMICAL VAPOR DEPOSITION CAPABLE OF PREVENTING A SUBSTRATE FOR SEMICONDUCTOR GROWTH FROM BEING UNEVENLY HEATED, A CHEMICAL VAPOR DEPOSITION APPARATUS, AND A HEATING METHOD USING THE CHEMICAL VAPOR DEPOSITION APPARATUS

SUSCEPTOR FOR CHEMICAL VAPOR DEPOSITION CAPABLE OF PREVENTING A SUBSTRATE FOR SEMICONDUCTOR GROWTH FROM BEING UNEVENLY HEATED, A CHEMICAL VAPOR DEPOSITION APPARATUS, AND A HEATING METHOD USING THE CHEMICAL VAPOR DEPOSITION APPARATUS

机译:化学气相沉积的支持者,能够防止因不均匀加热而生长半导体的物质,一种化学气相沉积设备,以及一种使用化学气相沉积设备的加热方法

摘要

PURPOSE: A susceptor for chemical vapor deposition, a chemical vapor deposition apparatus, and a heating method using the chemical vapor deposition apparatus are provided to grow good quality semiconductor on a substrate by uniformly heating a substrate even if the substrate is bent.;CONSTITUTION: A susceptor(100) includes a susceptor body part(104) and a light absorption part(107). The susceptor body part is made of a light transmitting material. The light absorption part is formed on an upper side of the susceptor body part. A first light absorption layer(102) is formed on a lower side of a substrate(101). The first light absorption layer absorbs light passing through the susceptor body part.;COPYRIGHT KIPO 2012
机译:目的:提供用于化学气相沉积的基座,化学气相沉积设备以及使用该化学气相沉积设备的加热方法,以通过均匀加热衬底来使衬底即使弯曲也能在衬底上生长出高质量的半导体。基座(100)包括基座主体部分(104)和光吸收部分(107)。基座主体部分由透光材料制成。光吸收部形成在基座主体部的上侧。在基板(101)的下侧形成第一光吸收层(102)。第一光吸收层吸收通过基座主体部分的光。; COPYRIGHT KIPO 2012

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