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Synthesis and optical properties of mullite (Al{sub}5.65Si{sub}0.35O{sub}9.175) nanowires

机译:莫来石的合成与光学性质(Al {Sub} 5.65SI {Sub} 0.350 {Sub} 9.175)纳米线

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large quantities of mullite nanowires were synthesized on mica substrates. The nanowires were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy and photoluminescence (PL) spectroscopy. The results indicate that the nanowire composition is Al{sub}5.65Si{sub}0.35O{sub}9.175, which fits the general mullite formula of Al{sub}(4+2x)Si{sub}(2-2x)O{sub}(10-x). The nanowires have a diameter range of 50-100 nm and lengths of several micrometers. Aligned nanowires can also been observed at the substrate edge. Raman microscopy indicated a change in the substrate surface occurred following the formation of nanowires. The nanowires have strong photoluminescence (PL) emission bands at 310, 397, 452 and 468 nm and the oxygen-related defect in the nanowires were supposed to be responsible for these emissions.
机译:在云母基材上合成大量的莫来石纳米线。 纳米线的特征在于X射线衍射(XRD),扫描电子显微镜(SEM),透射电子显微镜(TEM),拉曼光谱和光致发光(PL)光谱。 结果表明纳米线组合物是Al {Sub} 5.65Si {Sub} 0.350 {Sub} 9.175,其适合Al {sub}(4 + 2x)Si {sub}(2-2x)o的一般莫来石公式 {sub}(10-x)。 纳米线的直径范围为50-100nm,长度为几微米。 在基板边缘也可以观察到对齐的纳米线。 拉曼显微镜表明在形成纳米线后发生基板表面的变化。 纳米线在310,397,452和468nm处具有强烈的光致发光(PL)发射带,并且纳米线中的氧相关缺陷应该是对这些排放的负责。

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