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Through Silicon Via Filling by Copper Electroplating in Acidic Cupric Methanesulfonate Bath

机译:通过硅胶电镀在酸性铜磺酸盐浴中填充硅

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Copper electrodeposition in acidic cupric methanesulfonate bath with organic additives is discussed in this paper. The influence of poly(ethylene glycol) (PEG) and bis-(3-sodiumsulfopropyl disulfide) (SPS) on copper deposition were studied by means of linear sweep voltammetry, cyclic voltammetry and chronoamperometry. These electrochemical analysises revealed a competition of PEG and SPS on electrode surface site. The swiftness of SPS chemisorption and the subsequent displacement by the passivating film of PEG exerted an extra wave at small overpotential on the negative-going sweep. The following polarization curve indicated the firmness of the passivating film. All these features of additives in acidic cupric methanesulfonate bath suggested a novel method to achieve superconformal or bottom-up filling which was proved by actual TSV plating.
机译:本文讨论了酸性铜磺酸甲酯浴中铜电沉积,本文讨论了有机添加剂的甲磺酸盐。通过线性扫描伏安法,循环伏安法和计时法研究了聚(乙二醇)(PEG)和双 - (3-钠硫酸二硫化二硫化二硫化脲)(SPS)对铜沉积的影响。这些电化学分析揭示了PEG和SPS在电极表面部位上的竞争。 PEG钝化膜的SPS化学吸附和随后的位移的迅速施加了在负面扫描的小型过电位下的额外波浪。以下偏振曲线表示钝化膜的坚固性。酸性铜磺酸盐浴中添加剂的所有这些特征都提出了一种实现超成形或自下而上填充的新方法,其由实际的TSV电镀证明。

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