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首页> 外文期刊>Surface & Coatings Technology >Electropolishing behaviour and microstructures of copper deposits electroplated in an acidic copper-sulphuric bath with different thiourea contents
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Electropolishing behaviour and microstructures of copper deposits electroplated in an acidic copper-sulphuric bath with different thiourea contents

机译:在不同硫脲含量的酸性铜-硫酸浴中电镀铜的电抛光行为和微观结构

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摘要

Cu electrodeposition was performed on a rotating cylindrical Ti electrode in Cu-sulphate plating baths with different thiourea contents up to 8 ppm. The hardness,microstructure and electropolishing behaviour of the Cu deposits were studied. Some sulphur-rich particles in the Cu deposits prepared fromthe thiourea-containing baths were identified. The sulphur-rich particles dissolved preferentially during electropolishing in a 40 vol.% H_3PO_4 solution, forming a thin amorphous phase containing P in patches on the outer surface of the Cu deposit. The deposits prepared in the baths with thiourea showed higher dissolution current during polishing and formed a brightened and levelled surface with a surface roughness (R_a) lower than 30 nm.
机译:在具有高达8 ppm的不同硫脲含量的硫酸铜镀浴中,在旋转的圆柱形Ti电极上进行Cu电沉积。研究了铜沉积物的硬度,显微组织和电抛光行为。从含硫脲浴中制备的铜沉积物中发现了一些富硫颗粒。富含硫的颗粒在电抛光过程中优先溶解在40%(体积)的H_3PO_4溶液中,形成了薄的非晶相,其中的P中有P沉积在Cu沉积物的外表面。在具有硫脲的浴中制备的沉积物在抛光期间显示出更高的溶解电流,并形成了光亮且流平的表面,其表面粗糙度(R_a)低于30nm。

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