We have investigated the interface and oxide defects in SiC/SiO_2 by electron paramagnetic resonance spectroscopy (EPR) using oxidised porous SiC of 4H and 6H polytypes. Two paramagnetic defects generated by 1000 deg C furnace oxidation in dry oxygen

摘要

For the first time,we have successfully demonstrated the use of a high-K gate dielectrics material ZrO_2,for CMOS applications on pure germanium substrate. A near room temperature UV ozone oxidation technique has been developed for the formation of ZrO_2. We have achieved excellent C-V characteristics with hysteresis of 1.5 mV and a capacitance-based equivalent SiO_2 thickness (t_(ox,eq)) of about 6-10 A. A novel low thermal budget (< 400 deg C) germanium MOS process with high-kappa gate dielectric and metal gate electrode has been demonstrated. For the first time,self-aligned p-type surface-channel Ge MOSFETs with ZrO_2 gate dielectric and platinum gate electrode are demonstrated in a conventional MOSFET structure with twice the low-field hole mobility than that for Si MOSFETs. The surface passivation makes it possible to fabricate metal-Ge-metal (MSM) integrated optical detectors for optical interconnect applications.