Plasma-enhanced atomic layer deposition of TaC_x films using a new Ta precursor and H_2 plasma; Applications to diffusion barrier for Cu metallization and metal gate for NMOS

摘要

TaC_x has many excellent properties such as chemical inertness, thermal stability, low resistivity, tunable work function and good hardness. It also has dense interstitial crystal structure. TaC_x has been considered as potential candidate for diffusion barrier for Cu metallization, metal gate for especially NMOS and hard coating materials for cutting tool.