Process Technology to Improve Integration Stability for Cu/Low-k (SiOC/FSG Hybrid) Dual-Damascene Interconnects

摘要

EM reliability has been improved with the advanced technology in 0.13/im node device integrated with FSG/SiOC hybrid low-k dual damascene process. The advanced technology includes advanced PVD Ta(N) process, SiCN deposition process, and longer NH3 plasma treatment. The advanced PVD Ta(N) process prevented void from generating by promoting deposition along sidewall of via bottom. SiCN film with moisture barrier property is supposed to block oxygen diffusion and Cu oxidation and to result in good adhesion with Cu. Longer NH3 plasma treatment improved adhesion between Cu and SiC and decreased stress at Cu/SiC interface. The EM lifetime of samples integrated with advanced processes is improved over 30 years.