Simulation of Thermal Effects on Hydrogen-Terminated Diamond MOSFETs

摘要

The DC characteristics of hydrogen-terminated diamond (HTD) MOSFETs are simulated in the temperature range from 140 to 500K. The temperature-dependent parameters, such as band gap width, intrinsic/extrinsic carrier density, hole mobility and hole saturation velocity, are calculated and compared with measured data. The simulated output/transfer characteristics show good agreement with experiments, and the maximum drain current shows smaller thermal variation than the low-field mobility does, which is due to the existence of transverse field during device operation. In addition, the pinch-off voltage is found to change linearly with temperature and the temperature coefficient is as small as 0.26mV/K. The thermodynamic simulation reveals that for HTD MOSFETs, the lattice temperature will increase only 30K when the device is operated at a current density as high as 1A/mm.