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MEASUREMENT OF LEADFRAME STRAIN IN ELECTRICALLY ACTIVE POWER SEMICONDUCTORS

机译:电动功率半导体中引线框架应变的测量

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In this work, thermal-mechanical leadframe strain in an electrically active IGBT was measured using electronic speckle pattern interferometry (ESPI). ESPI is a non-contact optical technique capable of high resolution surface displacement measurements. The significant contribution of this paper is an experimental methodology by which strain can be measured in electrically active devices. A 3-D ESPI test stand was developed, combining two cameras to simultaneously capture the local (interconnect level) and global (device level) displacements. Through the combination of incremental sub-loads and mathematical recorrelation of speckle patterns, device power loads have been measured (which would have been otherwise impossible due to speckle decorrelation, which limits measurement of large deformations). A model-based tracking technique was developed from coupled experimental noise measurements and FE modeling - allowing for optimal strain solution to be extracted from noisy displacement results. The developed and experimentally-validated thermal-mechanical FE strain model agreed to within 7% of ESPI strain measurements.
机译:在这项工作中,使用电子斑点图案干涉测量法(ESPI)测量电活性IGBT中的热机电引线框。 ESPI是一种能够高分辨率表面位移测量的非接触式光学技术。本文的显着贡献是一种实验方法,可以在电活性器件中测量菌株。开发了3-D ESPI测试支架,组合两个相机同时捕获本地(互连级别)和全局(设备级别)位移。通过增量子负载和散斑图案的数学再振荡的组合,已经测量了设备电力负载(由于散斑去相关性,这会限制大变形的测量)。从耦合的实验噪声测量和FE模型开发了基于模型的跟踪技术 - 允许从嘈杂的位移结果中提取最佳应变溶液。开发和实验验证的热机械Fe应变模型同意在ESPI应变测量的7%以内。

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