Dual-Leadframe Transient Liquid Phase Bonded Power Semiconductor Module Assembly and Bonding Process

摘要

A high-temperature-capable wide-bandgap semiconductor power module package, coupled with a new high-temperature-capable bonding process (with an optimized assembly and manufacturing process), has been developed that, together, can allow device operation at temperatures exceeding 400℃, with the potential for higher-temperature operation depending on the semiconductor device characteristics. The semiconductor module is an ultra-compact, hybrid power module that uses double leadframes and direct leadframe-to-chip transient liquid phase (TLP) bonding. The unique advantages include very high current-carrying capability, low package parasitic impedance, low ther-momechanical stress at high temperatures, double-side cooling, and modularity for easy system-level integration.