MULTIPLICATION NOISE SIMULATION OF AMORPHOUS SILICON/SILICON-CARBIDE SEPARATED ABSORPTION AND MULTIPLICATION REGION WITH ADDITIONAL P-N-ASIC:H/I-A-SI:H/I-A-SIC:H AVALANCHE UNIT AVALANCHE PHOTODIODE

摘要

In this paper, we analyze excess noise factor and mean multiplication of avalanche photodiodes (APDs) with separate absorption and multiplication regions (SAM). Referring to the electric field distribution of this device, the electron ionization coefficients (α) and hole ionization coefficients ( β ) of each substage, and the multiplication noise of SAM-APD have been simulated by the use of the expressions presented by N.F. Shih [1]. After that, we compare the simulation results and the experimental results. [2]. When ionization rate (ks) is 0.95, the theoretical calculations fit well with experimental results.