Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency

摘要

Schematic cross-sectional structure (not drawn in scale), schematic energy band diagram under reverse bias for standard 4H-SiC SACM APD, calculated current-voltage characteristics and the multiplication gain, and calculated spectral response characteristics at the reverse voltage of 10 V for standard 4H-SiC SACM APD. Inset figure in shows the measured current-voltage characteristics and the multiplication gain. Inset figure in shows measured spectral response characteristics for standard 4H-SiC SACM APD biased at − 10 V