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Analyses thin film with diverse epitaxial relationship grown on yittrum stabilized zirconia substrate by chemical vapor deposition

机译:用化学气相沉积分析yittrum稳定的氧化锆基材上种植的不同外延关系的薄膜

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An anatase epitaxial thin film with diverse epitaxial relationship, YSZ (001) // anatase (001), YSZ (010) // anatase (110), was grown on a single crystalline yttrium stabilized zirconia (YSZ) (001) substrate by metal organic chemical vapor deposition (MOCVD). The full width at half maximum (FWHM) of the (004) reflection of this anatase epitaxial film was 0.4°, and the photoluminescence of this anatase epitaxial film showed visible emission with broad spectral width and large Stokes shift at room temperature. These results indicate that this anatase epitaxial film possessed almost equal crystalline quality compared with that growth under identical growth conditions on single crystalline SrTiO_3 substrate.
机译:具有不同外延关系的锐钛矿外延薄膜,YSZ(001)// anatase(001),YSZ(010)// anatase(110)在通过金属的单晶钇稳定的氧化锆(YSZ)(001)底物上生长有机化学气相沉积(MOCVD)。该锐钛矿外延膜的(004)反射的半最大(FWHM)的全宽度为0.4°,并且该锐钛矿外延膜的光致发光显示出具有宽光谱宽度和室温大的速度偏移的可见发射。这些结果表明,与单晶SrTiO_3基材上相同生长条件下的相同生长条件下的生长相比,该锐钛矿外延膜具有几乎等于晶体质量。

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