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Structural features of epitaxial NiFe_2O_4 thin films grown on different substrates by direct liquid injection chemical vapor deposition

机译:直接注液化学气相沉积法在不同衬底上生长的外延NiFe_2O_4薄膜的结构特征

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摘要

NiFe_2O_4 (NFO) thin films are grown on four different substrates, i.e., Lead Zinc Niobate-Lead Titanate (PZN-PT), Lead Magnesium Niobate-Lead Titanate (PMN-PT), MgAl_2O_4 (MAO) and SrTiO_3 (STO), by a direct liquid injection chemical vapor deposition technique (DLI-CVD) under optimum growth conditions where relatively high growth rate (~20nm/min), smooth surface morphology and high saturation magnetization values in the range of 260-290 emu/ cm~3 are obtained. The NFO films with correct stoichiometry (Ni:Fe=1:2) grow epitaxially on all four substrates, as confirmed by energy dispersive X-ray spectroscopy, transmission electron microscopy and x-ray diffraction. While the films on PMN-PT and PZN-PT substrates are partially strained, essentially complete strain relaxation occurs for films grown on MAO and STO. The formations of threading dislocations along with dark diffused contrast areas related to antiphase domains having a different cation ordering are observed on all four substrates. These crystal defects are correlated with lattice mismatch between the film and substrate and result in changes in magnetic properties of the films. Atomic resolution HAADF imaging and EDX line profiles show formation of a sharp interface between the film and the substrate with no inter diffusion of Pb or other elements across the interface. Antiphase domains are observed to originate at the film-substrate interface.
机译:NiFe_2O_4(NFO)薄膜在四种不同的衬底上生长,分别是:在最佳生长条件下的直接液体喷射化学气相沉积技术(DLI-CVD),生长速度相对较高(〜20nm / min),表面形态光滑且饱和磁化强度值在260-290 emu / cm〜3的范围内获得。具有正确化学计量比(Ni:Fe = 1:2)的NFO薄膜在所有四个基板上外延生长,这已经通过能量色散X射线光谱,透射电子显微镜和X射线衍射得到了证实。当PMN-PT和PZN-PT基板上的膜部分应变时,在MAO和STO上生长的膜会发生基本上完全的应变松弛。在所有四个基板上都观察到了螺纹位错的形成以及与具有不同阳离子序的反相结构域相关的深色扩散对比区域。这些晶体缺陷与膜和基底之间的晶格失配相关,并导致膜的磁性改变。原子分辨率HAADF成像和EDX线轮廓表明,薄膜与基材之间形成了清晰的界面,而Pb或其他元素在界面上没有相互扩散。观察到反相域起源于膜-基底界面。

著录项

  • 来源
    《Journal of Crystal Growth》 |2012年第1期|p.44-50|共7页
  • 作者单位

    International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560064, India;

    International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560064, India,Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560064, India;

    Centre for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487, USA;

    Centre for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Defects; A1. Interfaces; A3. Chemical vapor deposition processes; B1. Oxides; B2. Magnetic materials;

    机译:A1。缺陷;A1。接口;A3。化学气相沉积工艺;B1。氧化物;B2。磁性材料;

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