ORGANOMETALLIC COMPOUND FOR CHEMICAL VAPOR DEPOSITION, METHOD FOR PRODUCING ORGANOMETALLIC COMPOUND FOR CHEMICAL VAPOR DEPOSITION, NOVEL METAL THIN FILM AND METHOD FOR CHEMICAL VAPOR DEPOSITION OF NOVEL METAL COMPOUND THIN FILM

摘要

PROBLEM TO BE SOLVED: To obtain an organometallic compound for chemical vapor deposition, having excellent characteristics as a CVD raw material which a conventional bis(ethylcyclopentadienyl)ruthenium and ethylcyclopentadienyl(1,5-cyclooctadiene) indium have and high stability to oxygen. SOLUTION: This organometallic compound is useful for producing a ruthenium thin film or a ruthenium compound thin film by a chemical vapor deposition method and is an alkylcyclopentadienyl(cyclopentadienyl)ruthenium substituted with an n-butyl group, an iso-butyl group or a tert-butyl group). This organometallic compound is useful for producing an indium thin film or an indium oxide thin film by a chemical vapor deposition method and is an organometallic compound for a chemical vapor deposition composed of an alkylcyclopentadienyl(1,5-cyclooctadiene)indium substituted with any alkyl group of an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group and a tert-butyl group.