Static and Dynamic Characterization of a GaN-on-GaN 600 V, 2 A Vertical Transistor

摘要

Vertical GaN power semiconductors promisehigher power with faster switching speeds but the development ofthis technology has been slowed. This is due to the expense andlack of familiarity with GaN substrates. This paper will detail thefunctionality of HRL’s cutting-edge vertical GaN transistorwhich is mounted onto a specially made PCB and tested. Thetesting consists of a static characterization which shows abreakdown voltage of 600 V, as well as the transfercharacteristics, output characteristics, and the on-state resistancewith respect to current. The device is then switched at variousvoltages and currents with voltage switching speeds up to 97Vs. The device is successfully switched up to 450 V under a 2 Aload current.