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GaN Power Electronics: From GaN-on-Si Lateral Transistor to GaN-on-GaN Vertical Transistor and GaN CMOS IC.

机译：GaN功率电子器件：从GaN-on-si横向晶体管到GaN-on-GaN垂直晶体管和GaN CmOs IC。

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作者
Chu, R.; Cao, Y.; Li, R.; Chen, M.; Zehnder, D.; Garrido, A.; Romero, A.; DiMarino, C.; Burgos, R.; Boroyevich, D.;
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年度 2017
页码 1-4
总页数 4
原文格式 PDF
正文语种 eng
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关键词
GaN Power Electronics;

机译：GaN电力电子;

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专利

1. Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments [J] . M. Ruzzarin, M. Meneghini, C. De Santi, Microelectronics & Reliability . 2018,第SEPa期

机译：垂直GaN-on-GaN鳍式晶体管的退化：阶跃应力和恒压实验
2. Instability of Dynamic- R_{text ON} and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors [J] . M. Ruzzarin, M. Meneghini, D. Bisi, Electron Devices, IEEE Transactions on . 2017,第8期

机译：GaN-on-GaN垂直场效应晶体管中的动态R_ {text ON}和阈值电压的不稳定性
3. Suppression technique of vertical leakage current in GaN-on-Si power transistors [J] . Longobardi Giorgia, Pagnano Dario, Udrea Florin, Japanese journal of applied physics . 2019,第SC期

机译：GaN-on-Si功率晶体管中垂直泄漏电流的抑制技术
4. Not All GaN Transistors are Built Equal: The Benefits of Vertical GaN-on-GaN [C] . Dinesh Ramanathan, Charles Coles, Wolfgang Meier International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management . 2020

机译：并非所有的GaN晶体管都具有相同的构造：GaN垂直于GaN的好处
5. Design and Development of GaN-Based Vertical Transistors for Increased Power Density in Power Electronics Applications [D] . Ji, Dong. 2017

机译：电力电子应用增加功率密度的GaN基垂直晶体管的设计与开发
6. Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics [O] . Muhammad Fahlesa Fatahilah, Feng Yu, Klaas Strempel, -1

机译：自上而下的GaN纳米线晶体管具有几乎为零的栅极迟滞可用于平行垂直电子设备
7. Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments [O] . M. Ruzzarin, M. Meneghini, C. De Santi, 2018

机译：垂直GaN-On-GaN翅片晶体管的劣化：阶梯应力和恒压实验

GaN Power Electronics: From GaN-on-Si Lateral Transistor to GaN-on-GaN Vertical Transistor and GaN CMOS IC.

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