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MULTIPHYSICS MODEL FOR CHLORINE-ION RELATED CORROSION IN CU-AL WIREBOND MICROELECTRONIC PACKAGES

机译:Cu-AL焊线微电子封装中氯离子腐蚀的多物理场模型

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The increasing price of gold has resulted in industry interest in use of copper as alternative wire bonds interconnect material. Copper wire has the advantages of the lower cost, lower thermal resistivity, lower electrical resistivity, higher mechanical strength and higher deformation stability over the gold wire. In spite of the upside above, the Cu-Al wire bond is susceptible to the electrolytic corrosion and the reliability of Cu-Al wire bond is of great concern. Typical electronic molding compounds are hydrophilic and absorb moisture when exposed to humid environmental conditions. EMC contain ionic contaminants including chloride ions as a result of the chemical synthesis of the subcomponents of the resin, etching of metallization and the decomposition of the die-attach glue. The presence of moisture in the operating environment of semiconductor package makes the ion more mobile in the EMC. The migration of chloride ions to the Cu-Al interface may induce electrolytic corrosion inside the package causing degradation of the bond interface resulting in eventual failure. The rate at which the corrosion happens in the microelectronic packages is dependent upon the rate at which the ions transport through the EMC in addition to the reaction rate at the interface. . In this effort, a multiphysics model for galvanic corrosion in the presence of chloride has been presented. The contaminant diffusion along with the corrosion kinetics has been modeled. In addition, contaminated samples with known concentration of KCl contaminant have been subjected to the temperature humidity conditions of 130°C/100RH. The resistance of the Cu-Al interconnects in the PARR test have been monitored periodically using resistance spectroscopy. The diffusion coefficients of chloride ion has been measured in the electronic molding compound at various temperatures using two methods including diffusion cell and inductively coupled plasma (ICPMS). Moisture ingress into the EMC has been quantified through measurements of the weight gain in the EMC as a function of time. Tafel parameters including the open circuit potential and the slope of the polarization curve has been measured for both copper, aluminum under different concentrations of the ionic species and pH values in the EMC. The measurements have been incorporated into the COMSOL model to predict the corrosion current at the Cu-Al bond pad. The model predictions have been correlated with experimental data.
机译:黄金价格的上涨已经引起了业界对使用铜作为替代引线键合互连材料的兴趣。与金线相比,铜线具有成本低,热阻低,电阻率低,机械强度高和变形稳定性高的优点。尽管具有上述优点,但是Cu-Al引线键合容易受到电解腐蚀,并且Cu-Al引线键合的可靠性受到极大关注。典型的电子模塑化合物是亲水性的,当暴露于潮湿的环境条件下会吸收水分。由于树脂的次要成分的化学合成,金属化的蚀刻以及芯片连接胶的分解,EMC包含离子污染物,其中包括氯离子。半导体封装工作环境中水分的存在使离子在EMC中的流动性更高。氯离子迁移到Cu-Al界面可能会引起封装内部的电解腐蚀,从而导致键合界面退化,最终导致失效。微电子封装中发生腐蚀的速率除了取决于界面处的反应速率外,还取决于离子通过EMC传输的速率。 。在这一努力中,提出了在氯化物存在下电腐蚀的多物理场模型。已经对污染物扩散以及腐蚀动力学进行了建模。此外,已将已知浓度的KCl污染物污染的样品置于130°C / 100RH的温度湿度条件下。使用电阻光谱法定期监测PARR测试中Cu-Al互连的电阻。已经使用包括扩散池和电感耦合等离子体(ICPMS)在内的两种方法在各种温度下测量了电子模塑料中氯离子的扩散系数。通过测量EMC的重量增加随时间的变化,可以量化进入EMC的水分。在EMC中,在不同离子种类浓度和pH值下,已针对铜,铝测量了Tafel参数,包括开路电势和极化曲线的斜率。这些测量已合并到COMSOL模型中,以预测Cu-Al键合焊盘上的腐蚀电流。模型预测已与实验数据相关。

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