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Enhanced light extraction efficiency of AlGaN-based deep-ultraviolet light-emitting diodes by utilizing strong sidewall emission

机译:通过利用强大的侧壁发射增强了AlGaN基深紫外发光二极管的光提取效率

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We demonstrate new design of Deep-UV LEDs extracting strong sidewall-emission redirect top direction. We observe considerably enhanced optical and improved electrical properties and expect this model can provide key idea in current DUV LEDs for enhancing light extraction efficiency.
机译:我们展示了深紫外LED的新设计,提取强侧壁排放重定向顶部方向。我们观察到显着增强的光学和改进的电气性能,并期望该模型可以在电流DUV LED中提供关键思想,以提高光提取效率。

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