Influence of AlGaN/GaN 2D-channel linear dimensions of drain-to-source field GaN transistor on its instrument characteristics (effect of lateral dimensions)

摘要

It was shown [1, 2] that in the local approximation fractal properties of 2D-electron gas AlGaN/GaN of het-erostructures, determining the dependence of resistance per unit length ρ on length l and width d of the HEMT-transistor drain-to-source channel, significantly influence on its instrument characteristics: drain-to-source resistance RSD, thermal breakdown resistance UH and transconductance GM. It indicates that it is necessary consider fractal properties of the material during the engineering of high-power HEMT-transistors on Al-GaN/GaN. As it follows from obtained results, maximum values of instrument characteristics for material with smaller values of local approximation limits L can be obtained with smaller linear dimensions of transistor active elements.