Interface and material-quality study of InGaAsP/InP and InGaAsP/sub 1//InGaAsP/sub 2/ superlattices

摘要

We present work on the interface and material quality of InGaAsP/InP and InGaAsP/sub 1//InGaAsP/sub 2/ superlattices and multi-quantum-well (MQW) structures. The samples are grown using Aixtron metal-organic chemical vapor deposition (MOCVD), on undoped as well as n-type [100] InP substrates. The parameters explored are: growth temperature, growth interrupts between layers, and group V total flow. The characterizations tools used to determine the quality of the multi-layered structures is: surface morphology, X-Ray curves, and photoluminescence spectra. Strained and unstrained InGaAsP layers are explored.