Monte Carlo simulation of diffusion noise in AlGaAs/InGaAs/GaAs hetero-structure

摘要

The diffusion noise of the 2-D electron gas in an AlGaAs/InGaAs/GaAs heterostructure is studied by Monte Carlo simulation. The dependencies of velocity correlation function on parameters including electric field, charge sheet density, and InGaAs thickness are discussed, and comparisons with the AlGaAs/GaAs heterostructure are made.