Physics-based modeling of gate-leakage current in AlGaN/GaN high electron mobility transistors

摘要

Gate-leakage currents AlGaN/GaN high electron mobility transistors (HEMTs) have been studied. The reverse bias gate-leakage current is decomposed into three dominant components, namely, Fowler-Nordheim tunneling, trap-assisted-tunneling, and trap-assisted Frenkel-Poole emission. A physics-based model to calculate this current is given, which follows the experimental gate-leakage current characteristics closely over a wide range of bias and temperature.