An On-line Test Strategy and Analysis for a 1T1R Crossbar Memory

摘要

Memristors are emerging devices known by their nonvolability, compatibility with CMOS processes and high density in circuits density in circuits mostly owing to the crossbar nanoarchitecture. One of their most notable applications is in the memory system field. Despite their promising characteristics and the advancements in this emerging technology, variability and reliability are still principal issues for memristors. For these reasons, exploring techniques that check the integrity of circuits is of primary importance. Therefore, this paper proposes a method to perform an on-line test capable to detect a single failure inside the memory crossbar array.