Powering-off DRAM with Aggressive Page-out to Storage-class Memory in Low Power Virtual Memory System

摘要

With the rapidly growing demands for large capacity main memory in server systems and embedded systems, current DRAM-only approach is hitting the limit due to DRAM's capacity scaling issue and significant background power. With the emergence of new non-volatile memories, or storage-class memories (SCMs)[l], we can now explore low power, high capacity memory subsystem by redesigning virtual memory system to be SCM-aware. Most research on virtual memory system design has focused on minimizing page fault frequency due to slow data transfers using storage such as HDD/SSD as virtual memory swap device. However with an SCM-based swap device, its near-DRAM access latency has potential for reducing requisite DRAM size by aggressively evicting pages from DRAM to SCM without sacrificing performance, and thus reducing background power by powering off the freed DRAM space for low power. To select an optimal SCM from among the many candidate SCM technologies, the impact of SCM characteristics was evaluated using full-system simulation. Results show that utilizing SCM with low access latency and low write energy can lead to significant potential reduction of memory subsystem energy by up to 83%, while maintaining performance degradation within acceptable range.