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Package-Interposer-Package (PIP): A Breakthrough Package-on-Package (PoP) Technology for 3D-Integration

机译:包装 - 插入式包装(PIP):3D集成的突破包装(POP)技术

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Package on Package (PoP) stacking has become an attractive method for 3D integration to meet the demands of higher functionality in ever smaller packages, especially when coupled with the use of stacked die. To accomplish this, new packaging designs need to be able to integrate more dies with greater function, higher I/O counts, smaller pitches, and greater heat densities, while being pushed into smaller and smaller footprints. A new 3D “Package Interposer Package” (PIP) solution is suitable for combining multiple memory, ASICs, stacked die, stacked packaged die, etc., into a single package. This approach also favors system integration with high density power delivery by appropriate interposer design and thermal management. Traditional Package on Package (PoP) approaches use direct solder connections between the substrates and are limited to use of single (or minimum) die on the bottom substrate, to reduce warpage and improve stability. For PIP, the stability imparted by the interposer reduces warpage, allowing assemblers of the PIP to select the top and bottom components (substrates, die, stacked die, modules) from various suppliers. This mitigates the problem of variation in warpage trends from room temperature to reflow temperature for different substrates/modules when combined with other packages. PIP facilitates more spaceefficient designs, and can accommodate any stacked die height without compromising warpage and stability. PIP can accommodate modules with stacked die on organic, ceramic, or silicon board substrates, where each can be detached and replaced without affecting the rest of the package. Thus, PIP will be economical for high-end electronics, since a damaged, non-factional part of the package can be selectively removed and replaced. A variety of interposer structures were used to fabricate Package Interposer Package (PIP) modules. Electrical connections were formed during reflow using a tinlead eutectic solder paste. Interconnection among substrates (packages) in the stack was achieved using interposers. Plated through holes in the interposers, formed by laser or mechanical drilling and having diameters ranging from 50 μm to 250 μm, were filled with an electrically conductive adhesive and cured. The adhesive-filled and cured interposers were reflowed with circuitized substrates to produce a PIP structure. In summary, the present work describes an integrated approach to develop 3D PIP constructions on various stacked die or stacked packaged die configurations.
机译:层叠封装(POP)堆叠已经成为3D集成有吸引力的方法,以满足更高的功能的需求在更小的包,特别是当与使用堆叠裸片的耦合。要做到这一点,新的包装设计要能够更模具具有更大的功能,更高的I / O数量,更小的间距,和更大的热密度进行集成,同时被推到越来越小的脚印。一种新的3D“包装插入器包”(PIP)方案适用于组合多个存储器,ASIC的,堆叠的裸片堆叠封装管芯等,到单个封装中。这种方法也有利于通过适当的内插设计和热管理的高密度电力输送系统的集成。传统的层叠封装(POP)接近基板之间使用直接钎焊连接,并且局限于使用在底部基板上的单(或最小)模具,以降低翘曲和提高稳定性。为PIP,通过内插器所赋予的稳定性降低翘曲,从而使PIP的装配器来选择顶部和自各种供应商底部部件(基板,管芯,堆叠裸片,模块)。这减轻当与其它包合并从室温在翘曲的趋势变化的问题回流温度不同的底物/模块。 PIP便于更spaceefficient设计,并可以容纳任何堆叠管芯高度而不损害弯曲和稳定性。 PIP可以容纳于有机,陶瓷或硅板基底,其中每个可以拆卸和更换,而不会影响该包装的其余堆叠管芯组件。因此,PIP将是经济的高端电子,由于封装的损坏,非摩擦部分可被选择性地移除和替换。各种内插器的结构被用于制造包装插入器包(PIP)的模块。使用共晶tinlead焊膏回流期间形成电连接。在栈底物(包)之间的互连,使用内插来实现的。通过在该中介孔铺板,通过激光或机械钻孔,并且具有直径范围从50μm到250μm的形成,填充有导电性粘接剂和固化。的和固化的填充粘合剂的中介层用电路化衬底,以产生PIP结构回流。总之,目前的工作中描述的综合方法来开发各种堆叠裸片或堆叠封装的管芯的配置3D PIP构造。

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