Advanced characterization studies of sapphire substrate misorientation effects on GaN-based LED device development

摘要

Metal-organic chemical vapor deposition (MOCVD) epitaxial layers (n-GaN, InGaN/GaN multiple quantum well (MQW) and p-GaN) of GaN based green light emitting diodes (LEDs) structures have been sequentially grown on c-plane sapphire substrate with slight misorientation from the c plane. The qualities of these sequentially grown epitaxial layers show a strong dependence of the misorientation. Structural and optical characterization demonstrate the improved qualities of the epitaxial layers at 0.30 deg misorientation angle from c plane sapphire.