Investigation of the modulation efficiency of depleted InGaAsP/InP ridge waveguide phase modulators at 1.55 μm

摘要

Single mode depleted p-n InGaAsP/InP ridge waveguide phase modulators have been fabricated and investigated at 1.55 μm. The phase modulation efficiency of the device was characterized by using the Fabry-Perot resonance method with a tunable laser. The measured phase modulation efficiency for a 2 mm long device was determined as high as 34 deg/V·mm for TE mode. This value corresponds to the highest experimental electrooptic modulation efficiency reported so far for InGuAsP/InP p-n phase modulators at the said wavelength region.