首页> 外文会议>International Conference on Silicon Carbide and Related Materials; 20050918-23; Pittsburgh,PA(US) >Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy
【24h】

Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy

机译:DUV显微拉曼光谱研究同质外延生长的4H-SiC薄膜中的彗星结构

获取原文
获取原文并翻译 | 示例

摘要

Deep-ultraviolet (DUV) micro-Raman spectroscopy was applied to study the micro structures of surface defects in a 4H-SiC homoepitaxially grown film. From DUV Raman spectrum, inclusions of 3C-SiC was found in comet defects. The shape of 3C-structure in comets was investigated and it was found that 3C inclusions in comets can be classified into two types. In addition, spectrum broadening due to the coupling of nonfolded longitudinal optical phonon mode and the photo-excited carriers was also found. The formation mechanisms of 3C inclusion in comets were discussed.
机译:利用深紫外(DUV)显微拉曼光谱研究了4H-SiC同质外延生长膜中表面缺陷的微观结构。根据DUV拉曼光谱,在彗星缺陷中发现了3C-SiC夹杂物。研究了彗星中3C结构的形状,发现彗星中的3C夹杂物可以分为两种类型。另外,还发现由于未折叠的纵向光学声子模式和光激发载流子的耦合而使光谱变宽。讨论了彗星中3C夹杂物的形成机理。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号