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METHOD FOR IMPROVING THE SURFACE SMOOTHNESS, THE CRYSTAL STRUCTURE AND THE MICROWAVE SURFACE RESISTANCE OF YBa2Cu3O7- delta HIGH-TEMPERATURE SUPERCONDUCTOR FILMS GROWN ON CeO2-BUFFERED r-CUT SAPPHIRE SUBSTRATES
METHOD FOR IMPROVING THE SURFACE SMOOTHNESS, THE CRYSTAL STRUCTURE AND THE MICROWAVE SURFACE RESISTANCE OF YBa2Cu3O7- delta HIGH-TEMPERATURE SUPERCONDUCTOR FILMS GROWN ON CeO2-BUFFERED r-CUT SAPPHIRE SUBSTRATES
The invention comprises post-annealing of CeO2-buffered r-cut sapphire substrate at a temperature range of 960 - 1050 DEG C and growing high temperature superconductor YBa2Cu3O7- delta films on the post-annealed CeO2-buffered r-cut sapphire substrate.
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机译:本发明包括在960-1050℃的温度范围内对CeO 2缓冲的r-切割蓝宝石衬底进行后退火,并在后退火的CeO 2缓冲的r-cut蓝宝石衬底上生长高温超导体YBa 2 Cu 3 O 7-δ膜。
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