3D Thermo-EIectro-Mechanical Simulations of Gas Sensors Based on SOI Membranes

摘要

3D thermo-electro-mechanical device simulations are presented of a novel fully CMOS-compatible MOSFET gas sensor operating in a SOI membrane. A comprehensive stress analysis of a Si-SiO_2-based multilayer membrane has been performed to ensure a high degree of mechanical reliability at a high operating temperature (e.g. Up to 400℃). Moreover, optimisation of the layout dimensions of the SOI membrane, in particular the aspect ratio between the membrane length and membrane thickness, has been carried out to find the best trade-off between minimal device power consumption and acceptable mechanical stress.