Correlation of diffusion length and trap concentration with dislocation density in MOCVD-grown GaN

摘要

MOCVD-grown GaN epitaxial layers have been studied by the EBIC and DLTS methods. The local values of diffusion length were determined from the dependence of collected current on beam energy. The DLTS data were found to correlate with the EBIC results, revealing an increase in the concentration of E_C - 0.54 eV defects with decreasing the diffusion length and increasing dislocation density. The reasons for the correlation observed are discussed.