Shallow bistable non-effective-mass-like donors in hydrogen-implanted silicon

摘要

Infrared absorption of float-zone-refined silicon crystals implanted with protons and annealed at 450 ℃ has been investigated in the range 150-1800 cm~(-1). Along with the presence of well-known prominent bands related to higher-order electronic transitions of intrinsic defects at 700-1200 cm~(-1) and wagging vibrations of Si-H bonds in 600-800 cm~(-1) range, four effective-mass-like donors with binding energies in the range 32.6-38.7meV and dominating sharp absorption peaks at 309, 373 and 444 cm~(-1) were observed. The dominant sharp peaks as well as a broad band in the spectral region 200-1800cm~(-1) with the maximum at ～ 450 cm~(-1) demonstrate bistable behavior and arise from hydrogen-related non-effective-mass-like shallow donors.