Temperature Sensitivity Analysis of Double Gate Junctionless Field Effect Transistor with Vertical Gaussian Doping Profile

摘要

This paper investigates the impact of temperature on the DC and AC performance of double gate junctionless field effect transistor (DG-JLFET) with vertical Gaussian doping profile (VGDP) in channel and uniformly doped (UDP) DG-JLFET for the temperature ranging from 200K to 400K using 2D numerical simulation. It is observed that the off state current decreases with temperature for both UDP and GDP DG-JLFET. The off-state current drastically decreases at 200K for VGDP DG-JLFET in comparison to UDP DG-JLFET due to decrease in intrinsic carrier concentration. It is found that the On state current remains almost constant with increase in temperature. Further, The effect of temperature on short channel effects like threshold Voltage roll off, subthreshold swing and Drain induced barrier lowering (DIBL) of VGDP DG-JLFETs is smaller than UDP DGJLFET in the range of 200K to 400K. Moreover, the AC performance metrics like total gate capacitance, transconductance, transconductance generation efficiency, and Cutoff frequency are drastically affected by the temperature below 300K.