Strained germanium nanowire MOSFETs

摘要

Ge nanowire MOSFETs with a uniaxial compressive strain as high as 3.9% were demonstrated by 2-step Ge-condensation technique. Record high hole mobility (μeff = 1922 cm[su2}/Vs) and record-low off-current (2.7×10−9A/µm at Vd = −0.5 V) were achieved among scaled (sub-100nm Lg) Ge MOSFET for the device with the Lg of 45nm. These results indicate that strained-Ge channels have a potential to serve as pFET channel of scaled future CMOS.