Compact Models for Double Gate and Surround Gate MOSFETs

摘要

The models presented by Lu and Taur, [1], for lightly doped double gate and surround gate MOSFETs each require numerical solution of a transcendental equation. In this paper we present explicit, analytic solutions of these equations based on the Lambert function, [2]. These solutions are shown to be accurate compared with exact numerical solutions. Quantum effect corrections to the current-voltage formulae are also included, and these are based on analytic solutions obtained for the density gradient model, [3].