Compact-Modeling Solutions For Nanoscale Double-Gate and Gate-All-Around MOSFETs

摘要

Compact-modeling principles and solutions for nano-scale double-gate and gate-all-around MOSFETs are explained. The main challenges of compact modeling for these devices are addressed, and different approaches for describing the electrostatics, the transport mechanisms, and the high-frequency behavior are explained. Several approximations used to derive analytical solutions of Poisson's equation for doped and undoped devices are discussed, and the need for self-consistency with Schrodinger's equation and with the current continuity equation resulting from the transport models is addressed. Several techniques to extend the compact modeling to the high-frequency regime and to study the RF performance, including noise, are presented and discussed.