Design Considerations of a 3.1 - 3.5 GHz GaAs FET Feedback Amplifier

摘要

Recent GaAs FET devices have exhibited promising capabilities for microwave amplification. Circuit designers, however, found two problems with the FET applications, namely, the characteristically high input/output impedances are difficult to match into a 50/spl Omega/ system and the potential instabilities that exists at frequencies below 4 GHz. This paper describes development work done on feedback circuits in designing an unconditionally stable FET amplifier in the 3.1 - 3.5 GHz frequency range by using conventional microstrip techniques, and also investigates the effect of feedback components on noise and output capabilities.